spw35n60c3 coolmos tm power transistor features ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c a t c =100 c pulsed drain current 1) i d,pulse t c =25 c avalanche energy, single pulse e as i d =17.3 a, v dd =50 v 1500 mj avalanche energy, repetitive t ar 1),2) e ar i d =34.6 a, v dd =50 v avalanche current, repetitive t ar 1) i ar a drain source voltage slope dv /d t i d =34.6 a, v ds =480 v, t j =125 c v/ns gate source voltage v gs static v v gs ac (f >1 hz) power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c 20 30 313 -55 ... 150 1.5 34.6 50 value 34.6 21.9 103.8 v ds @ t j,max 650 v r ds(on),max 0.1 ? i d 34.6 a product summary type package ordering code marking spw35n60c3 pg-to247 q67040-s4673 35n60c3 pg-to247 rev. 2.4 page 1 200 5-09-21 reverse diode dv/dt dv/dt 15 v/ns 6)
spw35n60c3 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.4 k/w r thja leaded - - 62 soldering temperature , wavesoldering t sold 1.6 mm (0.063 in.) from case for 10 s - - 260 c electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v avalanche breakdown voltage v (br)ds v gs =0 v, i d =34.6 a - 700 - gate threshold voltage v gs(th) v ds = v gs , i d =1.9 ma 2.1 3 3.9 zero gate voltage drain current i dss v ds =600 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =600 v, v gs =0 v, t j =150 c - - 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na drain-source on-state resistance r ds(on) v gs =10 v, i d =21.9 a, t j =25 c - 0.081 0.1 v gs =10 v, i d =21.9 a, t j =150 c - 0.2 - gate resistance r g f =1 mhz, open drain - 0.6 - transconductance g fs | v ds |>2| i d | r ds(on)max , i d =21.9 a -36-s values thermal resistance, junction - ambient rev. 2.4 page 2 200 5-09-21
spw35n60c3 parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss - 4500 - pf output capacitance c oss - 1500 - reverse transfer capacitance c rss - 100 - effective output capacitance, energy related 3) c o(er) - 180 - effective output capacitance, time related 4) c o(tr) - 324 - turn-on delay time t d(on) -10-ns rise time t r -5- turn-off delay time t d(off) -70- fall time t f -10- gate charge characteristics gate to source charge q gs -18-nc gate to drain charge q gd -70- gate charge total q g - 150 200 gate plateau voltage v plateau - 5.3 - v 4) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. values v gs =0 v, v ds =25 v, f =1 mhz v dd =480 v, v gs =10 v, i d =34.6 a, r g =3.3 v dd =480 v, i d =34.6 a, v gs =0 to 10 v v gs =0 v, v ds =0 v to 480 v 1) pulse width limited by maximum temperature t j,max only 2) repetitive avalanche causes additional power losses that can be calculated as p av = e ar * f. 3) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. rev. 2.4 page 3 200 5-09-21 6) i sd <=i d , di/dt<=200a/us, v dclink =400v, v peak spw35n60c3 parameter symbol conditions unit min. typ. max. reverse diode diode continuous forward current i s - - 34.6 a diode pulse current i s,pulse - - 103.8 diode forward voltage v sd v gs =0 v, i f =34.6 a, t j =25 c - 0.95 1.2 v reverse recovery time t rr - 600 - ns reverse recovery charge q rr -21-c peak reverse recovery current i rrm -90-a t y pical transient thermal characteristics v r =480 v, i f = i s , d i f /d t =100 a/s t c =25 c values 5) c th6 models the additional heat capacitance of the package in case of non-ideal cooling. it is not needed if r thca =0 k/w. symbol value unit symbol value unit typ. typ. r th1 0.00441 k/w c th1 0.00037 ws/k r th2 0.00608 c th2 0.00223 r th3 0.0341 c th3 0.00315 r th4 0.0602 c th4 0.0179 r th5 0.0884 c th5 0.098 c th6 4.4 5) rev. 2.4 page 4 200 5-09-21
spw35n60c3 1 power dissipation 2 safe operating area p tot =f( t c ) i d =f( v ds ); t c =25 c; d =0 parameter: t p 3 max. transient thermal impedance 4 typ. output characteristics i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: d=t p / t parameter: v gs 0 100 200 300 400 0 40 80 120 160 t c [c] p tot [w] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 0 10 -1 10 -2 10 -3 t p [s] z thjc [k/w] 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 20 40 60 80 100 0 5 10 15 20 v ds [v] i d [a] rev. 2.4 page 5 200 5-09-21
spw35n60c3 5 typ. output characteristics 6 typ. drain-source on-state resistance i d =f( v ds ); t j =150 c r ds(on) =f( i d ); t j =150 c parameter: v gs parameter: v gs 7 drain-source on-state resistance 8 typ. transfer characteristics r ds(on) =f( t j ); i d =21.9 a; v gs =10 v i d =f( v gs ); | v ds |>2| i d | r ds(on)max parameter: t j 4 v 4.5 v 5 v 5.5 v 6 v 20 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 102030405060 i d [a] r ds(on) [ ] typ 98 % 0 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ] 25 c 150 c 0 20 40 60 80 100 0246810 v gs [v] i d [a] 4 v 4.5 v 5 v 5.5 v 6 v 6.5 v 7 v 20 v 0 10 20 30 40 50 60 0 5 10 15 20 v ds [v] i d [a] rev. 2.4 page 6 200 5-09-21
spw35n60c3 9 typ. gate charge 10 forward characteristics of reverse diode v gs =f( q gate ); i d =34.6 a pulsed i f =f( v sd ) parameter: v dd parameter: t j 11 avalanche soa 12 avalanche energy i ar =f( t ar ) e as =f( t j ); i d =17.3 a; v dd =50 v parameter: t j(start) 0 400 800 1200 1600 20 60 100 140 180 t j [c] e as [mj] 25 c 150 c 25 c, 98% 150 c, 98% 10 3 10 2 10 1 10 0 10 -1 0 0.5 1 1.5 2 2.5 v sd [v] i f [a] 125 c 25 c 10 3 10 2 10 1 10 0 10 -1 10 -2 10 -3 0 10 20 30 40 t ar [s] i av [a] 120 v 480 v 0 2 4 6 8 10 12 0 50 100 150 200 q gate [nc] v gs [v] rev. 2.4 page 7 200 5-09-21
spw35n60c3 13 drain-source breakdown voltage 14 typ. capacitances v br(dss) =f( t j ); i d =0.25 ma c =f( v ds ); v gs =0 v; f =1 mhz 15 typ. c oss stored energy e oss = f (v ds ) 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] ciss coss crss 10 5 10 4 10 3 10 2 10 1 0 100 200 300 400 500 v ds [v] c [pf] 0 5 10 15 20 25 30 0 100 200 300 400 500 600 v ds [v] e oss [j] rev. 2.4 page 8 200 5-09-21
spw35n60c3 definition of diode switching characteristics rev. 2.4 page 9 200 5-09-21
spw35n60c3 pg-to-247-3-1 rev. 2.4 page 10 200 5-09-21
spw35n60c3 published by infineon technologies ag 81726 mnchen germany ? infineon technologies ag 2006 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 2.4 page 11 200 5-09-21
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